While Czochralski(CZ) and float zone(FZ) growth process structural imperfections, which were named grown-in microdefects, are forms. Grown-in microdefects formation due to aggregation of intrinsic point defects and impurities. Therefore grown-in microdefects formation qualitative model may assist understanding of point defects basic characteristics (activation volumes, diffusivities, equilibrium concentration etc.). At the same time, investigation of intrinsic point defects recombination and(or) their aggregation with impurities in silicon matrix allow to determine formation mechanism of grown-in microdefects.At present, understanding of defects formation in dislocation-free single-crystal is very hard to understand because of theoretical and experimental data contradiction.
In present time many authors considers that combination of equilibrium and transportation conditions as well as solid-state kinetics of intrinsic point defects and impurities determines by concepts of point defects dynamics, which may help to explain grown-in microdefects formation. In this case, crystal is considering as dynamical system or solid-state chemical reactor where transportation and interaction of point defects, complexes and aggregates take place. It considers, that grown-in microdefects formation, their sizes, concentrations and space distributions determines by crystal dynamics and in-crystal temperature gradients. By analogy with chemical reactions assumes, that silicon point defect dynamic simulating may cause to quantitative understanding of grown-in microdefects formation process and to optimization their in-crystal space distribution. Point defects dynamic model includes convection, diffusion, thermal diffusion and intrinsic point defects recombination. It supposes, that all mechanisms are important for understanding of point defects dynamics, however intrinsic point defects fast recombination, near the melting temperature, has most critical sense. The baseline of all similar theoretical models is V.Voronkovs theoretical grown-in microdefects formation model. This mechanism brings to inherent difference between vacancy (V/G > Ccrit) and interstitial (V/G < Ccrit) crystal growth areas.
We propose new model approach to dislocation-free single-crystal silicon defect formation consideration. This approach is consist in fundamental “impurity – intrinsic point defect” interaction accounting, which is the base of defect formation. Fundamental principles of modeling are based on basic aspects of grown-in microdefects formation and growth heterogenic mechanism. Modeling on the base of grown-in microdefects formation heterogenic mechanism includes, as special case, point defects dynamics model.